Carmody, C.; Boudinov, H.; Tan, H. H.; Jagadish, C.; Lederer, M. J.; Kolev, V.; Luther-Davies, B.; Dao, Lap Van; Gal, M.
As⁺ and P⁺implantation was performed on semi-insulating (SI) and p-type InP samples for the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP samples were implanted with a dose of 1×10¹⁶ cm⁻² and p-type InP was implanted with doses between 1×10¹² and 1×10¹⁶ cm⁻². Subsequently, rapid thermal annealing at temperatures between 400 and 700 °C was performed for 30 sec. Hall-effect measurements, double-crystal x-ray diffraction, and time-resolved femtosecond...[Show more]
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