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Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers

Fu, Lan; v. d. Heijden, R. W.; Jagadish, C.; Dao, Lap Van; Gal, M.; Tan, Hark Hoe


The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO₂ and is ascribed to the low doping concentration of P, indicating that the doping concentration...[Show more]

CollectionsANU Research Publications
Date published: 2002-02-18
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1449522


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