Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers
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Fu, Lan; v. d. Heijden, R. W.; Jagadish, C.; Dao, Lap Van; Gal, M.; Tan, Hark Hoe
Description
The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO₂ and is ascribed to the low doping concentration of P, indicating that the doping concentration...[Show more]
Collections | ANU Research Publications |
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Date published: | 2002-02-18 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/15962 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.1449522 |
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01_Fu_Study_of_intermixing_in_a_2002.pdf | Published Version | 105.14 kB | Adobe PDF | ![]() |
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