Study of intermixing in a GaAs/AlGaAs quantum-well structure using doped spin-on silica layers
The effect of two different dopants, P and Ga, in spin-on glass (SOG) films on impurity-free vacancy disordering (IFVD) in GaAs/AlGaAs quantum-well structures has been investigated. It is observed that by varying the annealing and baking temperatures, P-doped SOG films created a similar amount of intermixing as the undoped SOG films. This is different from the results of other studies of P-doped SiO₂ and is ascribed to the low doping concentration of P, indicating that the doping concentration...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Fu_Study_of_intermixing_in_a_2002.pdf||Published Version||105.14 kB||Adobe PDF|
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