Fast 1 kV metal-oxide-semiconductor field-effect transistor switch
A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.
|Collections||ANU Research Publications|
|Source:||Review of Scientific Instruments|
|01_Dedman_Fast_1_kV_2001.pdf||396.12 kB||Adobe PDF|
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