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Fast 1 kV metal-oxide-semiconductor field-effect transistor switch

Dedman, C. J.; Roberts, E. H.; Gibson, S. T.; Lewis, B. R.


A fast, high-voltage switch based on cheap and readily available components is described. This simple circuit can switch 1 kV to ground with a fall time of ∼2.5 ns, and has proved a cost-effective means of driving electrostatic gating and rereferencing devices in pulsed ion-beam experiments.

CollectionsANU Research Publications
Date published: 2001-09
Type: Journal article
Source: Review of Scientific Instruments
DOI: 10.1063/1.1389488


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