Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers
We have used photoluminescence,deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Deenapanray_Impurity-free_disordering_2002.pdf||411.31 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.