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Impurity-free disordering mechanisms in GaAs-based structures using doped spin-on silica layers

Deenapanray, Prakash N. K.; Gong, Bin; Lamb, R. N.; Martin, A.; Fu, L.; Tan, H. H.; Jagadish, C.


We have used photoluminescence,deep level transient spectroscopy and x-ray photoelectron spectroscopy to investigate the mechanisms of impurity-free disordering in GaAs-based structures using doped spin-on silica layers. We demonstrate that VGa is efficiently converted into arsenic-antisite, AsGa, related defects (EL2-type defects) when the GaAs layer is under compressive stress. We propose that the efficient formation of EL2-type defects reduces the efficiency of impurity-free interdiffusion...[Show more]

CollectionsANU Research Publications
Date published: 2002-06-10
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1484244


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