Suppression of interdiffusion in GaAs/AlGaAs quantum-well structure capped with dielectric films by deposition of gallium oxide
In this work, different dielectric caps were deposited on the GaAs/AlGaAs quantum well(QW) structures followed by rapid thermal annealing to generate different degrees of interdiffusion. Deposition of a layer of GaxOy on top of these dielectric caps resulted in significant suppression of interdiffusion. In these samples, it was found that although the deposition of GaxOy and subsequent annealing caused additional injection of Ga into the SiO₂ layer, Ga atoms were still able to outdiffuse from...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Fu_Suppression_of_interdiffusion_2002.pdf||Published Version||464.02 kB||Adobe PDF|
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