Atomic relocation processes in impurity-free disordered p-GaAs epilayers studied by deep level transient spectroscopy
We have used capacitance–voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925 °C. Two electrically active defects HA (EV+0.39 eV) and HB2 (EV+0.54 eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of galliumvacancies...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Deenapanray_Atomic_relocation_processes_in_2002.pdf||475.99 kB||Adobe PDF|
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