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Atomic relocation processes in impurity-free disordered p-GaAs epilayers studied by deep level transient spectroscopy

Deenapanray, P. N. K.; Martin, A.; Doshi, S.; Jagadish, C.; Tan, Hark Hoe


We have used capacitance–voltage and deep level transient spectroscopy techniques to study the relocation of impurities, such as Zn and Cu, in impurity-free disordered (IFD) p-type GaAs. A four-fold increase in the doping concentration is observed after annealing at 925 °C. Two electrically active defects HA (EV+0.39 eV) and HB2 (EV+0.54 eV), which we have attributed to Cu- and Asi/AsGa-related levels, respectively, are observed in the disordered p-GaAs layers. The injection of galliumvacancies...[Show more]

CollectionsANU Research Publications
Date published: 2002-11-04
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1519728


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