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Crystal size and oxygen segregation for polycrystalline GaN

Butcher, K. S. A.; Timmers, H.; Afifuddin, null; Chen, Patrick P.-T.; Weijers, T. D. M.; Goldys, E. M.; Tansley, T. L.; Elliman, R. G.; Freitas, J. A.

Description

The grain size for polycrystallineGaN,grown in low-temperature gallium-rich conditions, is shown to be correlated to the oxygen content of the films. Films with lower oxygen content were observed to have larger crystals with an increased tendency to a single-preferred crystal orientation.Elastic recoil detection analysis with heavy ions (i.e., 200 MeV ¹⁹⁷Au ions) was used to determine the composition of the GaN films grown for the study, including the hydrogen, carbon, gallium, nitrogen, and...[Show more]

CollectionsANU Research Publications
Date published: 2002-09-15
Type: Journal article
URI: http://hdl.handle.net/1885/15948
Source: Journal of Applied Physics
DOI: 10.1063/1.1499232

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