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Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

Kerr, M. J.; Schmidt, J.; Cuevas, A.; Bultman, J. H.


The emitter saturation current density(JOe) and surface recombination velocity (Sp) of various high quality passivation schemes on phosphorus-diffused solar cell emitters have been determined and compared. The passivation schemes investigated were (i) stoichiometric plasma enhanced chemical vapor deposited(PECVD)silicon nitride (SiN), (ii) forming gas annealed thermally grown silicon oxide, and (iii) aluminum annealed (alnealed) thermal silicon oxide. Emitters with sheet resistances ranging...[Show more]

CollectionsANU Research Publications
Date published: 2001-04-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1350633


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