Skip navigation
Skip navigation

Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide

Kerr, M. J.; Schmidt, J.; Cuevas, A.; Bultman, J. H.


The emitter saturation current density(JOe) and surface recombination velocity (Sp) of various high quality passivation schemes on phosphorus-diffused solar cell emitters have been determined and compared. The passivation schemes investigated were (i) stoichiometric plasma enhanced chemical vapor deposited(PECVD)silicon nitride (SiN), (ii) forming gas annealed thermally grown silicon oxide, and (iii) aluminum annealed (alnealed) thermal silicon oxide. Emitters with sheet resistances ranging...[Show more]

CollectionsANU Research Publications
Date published: 2001-04-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1350633


File Description SizeFormat Image
01_Kerr_Surface_recombination_velocity_2001.pdf436.74 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator