Surface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
The emitter saturation current density(JOe) and surface recombination velocity (Sp) of various high quality passivation schemes on phosphorus-diffused solar cell emitters have been determined and compared. The passivation schemes investigated were (i) stoichiometric plasma enhanced chemical vapor deposited(PECVD)silicon nitride (SiN), (ii) forming gas annealed thermally grown silicon oxide, and (iii) aluminum annealed (alnealed) thermal silicon oxide. Emitters with sheet resistances ranging...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kerr_Surface_recombination_velocity_2001.pdf||436.74 kB||Adobe PDF|
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