Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires
Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 ×1011 to 5 ×1013 p cm-2. It is...[Show more]
|Collections||ANU Research Publications|
|01_Li_Enhancement_of_radiation_2018.pdf||1.25 MB||Adobe PDF||Request a copy|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.