Skip navigation
Skip navigation

Enhancement of radiation tolerance in GaAs/AlGaAs core-shell and InP nanowires

Li, Fajun; Xie, Xiaolong; Gao, Qiang; Tan, Liying; Zhou, Yanping; Yang, Qingbo; Ma, Jing; Fu, Lan; Jagadish, Chennupati; Tan, Hoe Hark

Description

Radiation effects on semiconductor nanowires (NWs) have attracted the attention of the research community due to their potential applications in space and atomic fields. The effective implementation of NW devices in a radiation environment is a matter of concern. Here, the photoluminescence (PL) and time-resolved PL (TRPL) measurements were performed on both GaAs and InP NWs at room temperature before and after 1 MeV H+ irradiation with fluences ranging from 1 ×1011 to 5 ×1013 p cm-2. It is...[Show more]

CollectionsANU Research Publications
Date published: 2018
Type: Journal article
URI: http://hdl.handle.net/1885/159355
Source: Nanotechnology
DOI: 10.1088/1361-6528/aab009

Download

File Description SizeFormat Image
01_Li_Enhancement_of_radiation_2018.pdf1.25 MBAdobe PDF    Request a copy


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  22 January 2019/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator