Towards a better understanding of the operative mechanisms underlying impurity-free disordering of GaAs: Effect of stress
The effect of stress on defect creation and diffusion during impurity-free disordering of SiOₓ-capped n-GaAs epitaxial layers has been investigated using deep level transient spectroscopy. The oxygen content in the SiOₓ layer and the nature of the stress that it imposes on the GaAs layer were varied by changing the nitrous oxideflow rate, N, during plasma-enhanced chemical vapor deposition of the capping layer. The peak intensity of defects S1 and S4 increased with the increasing nitrous...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures|
|01_Doshi_Towards_a_better_understanding_2003.pdf||445.92 kB||Adobe PDF|
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