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Implant isolation of Zn-doped GaAs epilayers: effects of ion species, doping concentration, and implantation temperature

Deenapanray, Prakash N. K.; Gao, Q.; Jagadish, C.


The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was studied using H, Li, C, and O ion implantation. The ion mass did not play a significant role in the stability of isolation, and a similar activation energy of ∼(0.63±0.03 eV) was obtained for isolation using either H or O ions. Furthermore, the isolation was stable against isochronal annealing up to 550 °C as long as the ion dose was 2–3.5 times the threshold dose for complete isolation, Dth,...[Show more]

CollectionsANU Research Publications
Date published: 2003-06-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1569664


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