Implant isolation of Zn-doped GaAs epilayers: effects of ion species, doping concentration, and implantation temperature
The electrical isolation of Zn-doped GaAs layers grown by metalorganic chemical vapor deposition was studied using H, Li, C, and O ion implantation. The ion mass did not play a significant role in the stability of isolation, and a similar activation energy of ∼(0.63±0.03 eV) was obtained for isolation using either H or O ions. Furthermore, the isolation was stable against isochronal annealing up to 550 °C as long as the ion dose was 2–3.5 times the threshold dose for complete isolation, Dth,...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Deenapanray_Implant_isolation_of_Zn-doped_2003.pdf||Published Version||101 kB||Adobe PDF|
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