Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide
In this work, titanium dioxide (TiO₂)film was deposited onto the In₀.₅Ga₀.₅As/GaAs quantum-dot structure by electron-beam evaporation to investigate its effect on interdiffusion. A large redshifted and broadened spectrum from the dot emission was observed compared with that from the uncapped (but annealed) reference sample, indicating the suppression of thermal interdiffusion due to TiO₂deposition. The structure was also capped with a silicon dioxide (SiO₂) single layer or SiO₂/TiO₂ bilayer...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Fu_Suppression_of_interdiffusion_2003.pdf||Published Version||132.63 kB||Adobe PDF|
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