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Suppression of interdiffusion in InGaAs/GaAs quantum dots using dielectric layer of titanium dioxide

Fu, L.; Lever, P.; Tan, H. H.; Jagadish, C.; Reece, P.; Gal, M.


In this work, titanium dioxide (TiO₂)film was deposited onto the In₀.₅Ga₀.₅As/GaAs quantum-dot structure by electron-beam evaporation to investigate its effect on interdiffusion. A large redshifted and broadened spectrum from the dot emission was observed compared with that from the uncapped (but annealed) reference sample, indicating the suppression of thermal interdiffusion due to TiO₂deposition. The structure was also capped with a silicon dioxide (SiO₂) single layer or SiO₂/TiO₂ bilayer...[Show more]

CollectionsANU Research Publications
Date published: 2003-04-21
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1569046


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