Influence of cap layer on implantation induced interdiffusion in InP/InGaAs quantum wells

Abstract

We have investigated the effect of implantation at room temperature and 200 °C into lattice matched InP/InGaAs quantum wellstructures capped with InP and InGaAs layers. P− ions of 20 keV were implanted into the cap layer at doses of 1×10¹²−1×10¹⁴ cm⁻². The dose dependent evolution of shifts in photoluminescence energy for the InP capped sample was found to be affected by the implant temperature. Rutherford back scattering measurements show that the nature of the damage induced at different implant temperatures is responsible for this behavior. It was found that the InGaAs capped sample was less sensitive to the implant temperature than the InP capped sample.