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Ferromagnetic Ga₁ˍₓ Mnₓ As produced by ion implantation and pulsed-laser melting

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Scarpulla, M. A.; Dubon, O. D.; Yu, K. M.; Monteiro, O.; Pillai, M. R.; Aziz, M. J.; Ridgway, M. C.

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We demonstrate the formation of ferromagneticGa₁ˍₓMnₓAsfilms by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x≈0.03. A remanent magnetization persisting above 85 K has been observed for samples with x≈0.10, in which 40% of the Mn resides on...[Show more]

dc.contributor.authorScarpulla, M. A.
dc.contributor.authorDubon, O. D.
dc.contributor.authorYu, K. M.
dc.contributor.authorMonteiro, O.
dc.contributor.authorPillai, M. R.
dc.contributor.authorAziz, M. J.
dc.contributor.authorRidgway, M. C.
dc.date.accessioned2015-10-15T00:16:56Z
dc.date.available2015-10-15T00:16:56Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15926
dc.description.abstractWe demonstrate the formation of ferromagneticGa₁ˍₓMnₓAsfilms by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x≈0.03. A remanent magnetization persisting above 85 K has been observed for samples with x≈0.10, in which 40% of the Mn resides on substitutional lattice sites. We find that the ferromagnetism in Ga₁ˍₓMnₓAs is rather robust to the presence of structural defects.
dc.description.sponsorshipThe work at the Lawrence Berkeley National Laboratory was supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, of the U.S. Department of Energy under Contract No. DE-AC03-76SF00098. The work at Harvard was supported by NASA Grant No. NAG8-1680. One of the authors ~M.A.S.! acknowledges support from an NSF Graduate Research Fellowship.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1555260
dc.sourceApplied Physics Letters
dc.subjectKeywords: Ferromagnetic materials; Gallium compounds; Ion implantation; Magnetization; Melting; Pulsed laser applications; Remanence; Pulsed laser melting; Magnetic films
dc.titleFerromagnetic Ga₁ˍₓ Mnₓ As produced by ion implantation and pulsed-laser melting
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume82
dc.date.issued2003-02-24
local.identifier.absfor020406
local.identifier.absfor020404
local.identifier.absfor091299
local.identifier.ariespublicationMigratedxPub17964
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationScarpulla, M A, University of California, United States of America
local.contributor.affiliationDubon, O D, University of California, United States of America
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory, United States of America
local.contributor.affiliationMonteiro, O, Lawrence Berkeley National Laboratory, United States of America
local.contributor.affiliationPillai, M R, Lawrence Berkeley National Laboratory, United States of America
local.contributor.affiliationAziz, M J, Lawrence Berkeley National Laboratory, United States of America
local.contributor.affiliationRidgway, Mark C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue8
local.bibliographicCitation.startpage1251
local.bibliographicCitation.lastpage1253
local.identifier.doi10.1063/1.1555260
dc.date.updated2015-12-12T08:35:50Z
local.identifier.scopusID2-s2.0-0037463298
CollectionsANU Research Publications

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