Ferromagnetic Ga₁ˍₓ Mnₓ As produced by ion implantation and pulsed-laser melting
We demonstrate the formation of ferromagneticGa₁ˍₓMnₓAsfilms by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x≈0.03. A remanent magnetization persisting above 85 K has been observed for samples with x≈0.10, in which 40% of the Mn resides on...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Scarpulla_Ferromagnetic_Ga₁ˍₓ_Mnₓ_As_2003.pdf||Published Version||49.81 kB||Adobe PDF|
Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.