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Ferromagnetic Ga₁ˍₓ Mnₓ As produced by ion implantation and pulsed-laser melting

Scarpulla, M. A.; Dubon, O. D.; Yu, K. M.; Monteiro, O.; Pillai, M. R.; Aziz, M. J.; Ridgway, M. C.


We demonstrate the formation of ferromagneticGa₁ˍₓMnₓAsfilms by Mn ion implantation into GaAs followed by pulsed-laser melting. Irradiation with a single excimer laser pulse results in the epitaxial regrowth of the implanted layer with Mn substitutional fraction up to 80% and effective Curie temperature up to 29 K for samples with a maximum Mn concentration of x≈0.03. A remanent magnetization persisting above 85 K has been observed for samples with x≈0.10, in which 40% of the Mn resides on...[Show more]

CollectionsANU Research Publications
Date published: 2003-02-24
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1555260


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