Implant isolation of ZnO
We study ion-irradiation-induced electrical isolation in n-type single-crystal ZnO epilayers. Emphasis is given to improving the thermal stability of isolation and obtaining a better understanding of the isolation mechanism. Results show that an increase in the dose of 2 MeV ¹⁶Oions (up to ∼2 orders of magnitude above the threshold isolation dose) and irradiation temperature (up to 350 °C) has a relatively minor effect on the thermal stability of electrical isolation, which is limited to...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kucheyev_Implant_isolation_of_ZnO_2003.pdf||Published Version||74.1 kB||Adobe PDF|
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