Formation of diluted III–V nitride thin films by N ion implantation
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Yu, K. M.; Walukiewicz, W.; Wu, J.; Beeman, J. W.; Ager, J. W.; Haller, E. E.; Shan, W.; Xin, H. P.; Tu, C. W.; Ridgway, M. C.
Description
iluted III–Nₓ–V₁ˍₓ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nₓ–V₁ˍₓ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNₓAs1−x and InNₓP₁ˍₓalloys. In GaNₓAs₁ˍₓ the highest value of x (fraction of “active” substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is...[Show more]
dc.contributor.author | Yu, K. M. | |
---|---|---|
dc.contributor.author | Walukiewicz, W. | |
dc.contributor.author | Wu, J. | |
dc.contributor.author | Beeman, J. W. | |
dc.contributor.author | Ager, J. W. | |
dc.contributor.author | Haller, E. E. | |
dc.contributor.author | Shan, W. | |
dc.contributor.author | Xin, H. P. | |
dc.contributor.author | Tu, C. W. | |
dc.contributor.author | Ridgway, M. C. | |
dc.date.accessioned | 2015-10-14T23:29:02Z | |
dc.date.available | 2015-10-14T23:29:02Z | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/1885/15923 | |
dc.description.abstract | iluted III–Nₓ–V₁ˍₓ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nₓ–V₁ˍₓ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNₓAs1−x and InNₓP₁ˍₓalloys. In GaNₓAs₁ˍₓ the highest value of x (fraction of “active” substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is thermally unstable at temperatures higher than 850 °C. The highest value of x achieved in InNₓP₁ˍₓ was higher, 0.012, and the NP was found to be stable to at least 850 °C. In addition, the N activation efficiency in implantedInNₓP₁ˍₓ was at least a factor of 2 higher than that in GaNₓAs₁ˍₓ under similar processing conditions. AlyGa1−yNₓAs₁ˍₓ had not been made previously by epitaxial techniques. N implantation was successful in producing AlyGa1−yNₓAs₁ˍₓalloys. Notably, the band gap of these alloys remains direct, even above the value of y (y>0.44) where the band gap of the host material is indirect. | |
dc.description.sponsorship | This work was supported by the ‘‘Photovoltaic Materials Focus Area’’ in the DOE Center of Excellence for the Synthesis and Processing of Advanced Materials, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences under U.S. Department of Energy Contract No. DE-ACO3-76SF00098. The work at UCSD was partially supported by Midwest Research Institute under subcontractor No. AAD-9-18668-7 from NREL. | |
dc.publisher | American Institute of Physics (AIP) | |
dc.rights | http://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 15/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1388860 | |
dc.source | Journal of Applied Physics | |
dc.title | Formation of diluted III–V nitride thin films by N ion implantation | |
dc.type | Journal article | |
local.description.notes | Imported from ARIES | |
local.description.refereed | Yes | |
local.identifier.citationvolume | 90 | |
dc.date.issued | 2001-09-01 | |
local.identifier.absfor | 090699 | |
local.identifier.ariespublication | MigratedxPub1736 | |
local.publisher.url | https://www.aip.org/ | |
local.type.status | Published Version | |
local.contributor.affiliation | Yu, Kin Man, Lawrence Livermore National Laboratory, United States of America | |
local.contributor.affiliation | Walukiewicz, W, Lawrence Berkeley National Laboratory, United States of America | |
local.contributor.affiliation | Wu, J, Lawrence Berkeley National Laboratory, United States of America | |
local.contributor.affiliation | Beeman, J W, Lawrence Berkeley National Laboratory, United States of America | |
local.contributor.affiliation | Ager, J W, Lawrence Berkeley National Laboratory, United States of America | |
local.contributor.affiliation | Haller, E E, University of California, United States of America | |
local.contributor.affiliation | Shan, Wei, OptiWork, Inc., United States of America | |
local.contributor.affiliation | Xin, H, University of California, United States of America | |
local.contributor.affiliation | Tu, C W, University of California, United States of America | |
local.contributor.affiliation | Ridgway, Mark C, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University | |
local.bibliographicCitation.issue | 5 | |
local.bibliographicCitation.startpage | 2227 | |
local.bibliographicCitation.lastpage | 2234 | |
local.identifier.doi | 10.1063/1.1388860 | |
dc.date.updated | 2015-12-10T11:11:53Z | |
local.identifier.scopusID | 2-s2.0-0040622139 | |
Collections | ANU Research Publications |
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