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Formation of diluted III–V nitride thin films by N ion implantation

Yu, K. M.; Walukiewicz, W.; Wu, J.; Beeman, J. W.; Ager, J. W.; Haller, E. E.; Shan, W.; Xin, H. P.; Tu, C. W.; Ridgway, M. C.

Description

iluted III–Nₓ–V₁ˍₓ alloys were successfully synthesized by nitrogen implantation into GaAs,InP, and AlyGa1−yAs. In all three cases the fundamental band-gap energy for the ion beam synthesized III–Nₓ–V₁ˍₓ alloys was found to decrease with increasing N implantation dose in a manner similar to that observed in epitaxially grownGaNₓAs1−x and InNₓP₁ˍₓalloys. In GaNₓAs₁ˍₓ the highest value of x (fraction of “active” substitutional N on As sublattice) achieved was 0.006. It was observed that NAs is...[Show more]

CollectionsANU Research Publications
Date published: 2001-09-01
Type: Journal article
URI: http://hdl.handle.net/1885/15923
Source: Journal of Applied Physics
DOI: 10.1063/1.1388860

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