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Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

Trupke, T.; Green, M. A.; Würfel, P.; Altermatt, P. P.; Wang, A; Zhao, J.; Corkish, R.

Description

The radiative recombination coefficient B(T) of intrinsic crystalline silicon is determined as a function of temperature over the temperature range 77–300 K. We observe that B(T) decreases as a function of temperature and we compare our results to previously published contradictory data from the literature. The radiative recombination coefficient is calculated from the absorption coefficient for band-to-band transitions, which we determine at different temperatures from photoluminescencespectra...[Show more]

dc.contributor.authorTrupke, T.
dc.contributor.authorGreen, M. A.
dc.contributor.authorWürfel, P.
dc.contributor.authorAltermatt, P. P.
dc.contributor.authorWang, A
dc.contributor.authorZhao, J.
dc.contributor.authorCorkish, R.
dc.date.accessioned2015-10-14T23:04:21Z
dc.date.available2015-10-14T23:04:21Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15920
dc.description.abstractThe radiative recombination coefficient B(T) of intrinsic crystalline silicon is determined as a function of temperature over the temperature range 77–300 K. We observe that B(T) decreases as a function of temperature and we compare our results to previously published contradictory data from the literature. The radiative recombination coefficient is calculated from the absorption coefficient for band-to-band transitions, which we determine at different temperatures from photoluminescencespectra measured on planar high resistivity float zone silicon wafers. Photoluminescencespectra could be detected over a large range of more than five orders of magnitude, which allowed us to determine extremely low values of the absorption coefficient in the spectral range where absorption processes are accompanied by the simultaneous absorption of up to four phonons.
dc.description.sponsorshipThe Centre of Excellence for Advanced Silicon Photovoltaics and Photonics is supported under the Australian Research Council’s Centres of Excellence Scheme. One author (T.T.) would like to thank the Alexander von Humboldt foundation for a Feodor Lynen-Scholarship while another (M.A.G.) acknowledges the award of an Australian Government Federation Fellowship.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1610231
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Absorption; Crystalline materials; Phonons; Photoluminescence; Temperature dependence; Silicon
dc.titleTemperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume94
dc.date.issued2003-10-15
local.identifier.absfor090699
local.identifier.absfor020405
local.identifier.ariespublicationMigratedxPub17344
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationTrupke, Thorsten, University of New South Wales, Australia
local.contributor.affiliationGreen, Martin Andrew, University of New South Wales, Australia
local.contributor.affiliationWurfel, P, University of Karlsruhe, Germany
local.contributor.affiliationAltermatt, Pietro P, College of Engineering and Computer Science, College of Engineering and Computer Science, Research School of Engineering, The Australian National University
local.contributor.affiliationWang, A., Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales
local.contributor.affiliationZhao, J., Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales
local.contributor.affiliationCorkish, R., Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, University of New South Wales
local.bibliographicCitation.issue8
local.bibliographicCitation.startpage4930
local.bibliographicCitation.lastpage4937
local.identifier.doi10.1063/1.1610231
dc.date.updated2015-12-12T08:30:14Z
local.identifier.scopusID2-s2.0-0242272427
CollectionsANU Research Publications

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