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Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon

Trupke, T.; Green, M. A.; Würfel, P.; Altermatt, P. P.; Wang, A.; Zhao, J.; Corkish, R.


The radiative recombination coefficient B(T) of intrinsic crystalline silicon is determined as a function of temperature over the temperature range 77–300 K. We observe that B(T) decreases as a function of temperature and we compare our results to previously published contradictory data from the literature. The radiative recombination coefficient is calculated from the absorption coefficient for band-to-band transitions, which we determine at different temperatures from photoluminescencespectra...[Show more]

CollectionsANU Research Publications
Date published: 2003-10-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1610231


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