Temperature dependence of the radiative recombination coefficient of intrinsic crystalline silicon
The radiative recombination coefficient B(T) of intrinsic crystalline silicon is determined as a function of temperature over the temperature range 77–300 K. We observe that B(T) decreases as a function of temperature and we compare our results to previously published contradictory data from the literature. The radiative recombination coefficient is calculated from the absorption coefficient for band-to-band transitions, which we determine at different temperatures from photoluminescencespectra...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Trupke_Temperature_dependence_of_the_2003.pdf||451.15 kB||Adobe PDF|
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