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Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Pellegrino, P.; Lévêque, P.; Wong-Leung, Jennifer; Jagadish, C.; Svensson, B. G.

Description

An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon–interstitial carbon pair, are obtained at the same sample temperature and can be...[Show more]

dc.contributor.authorPellegrino, P.
dc.contributor.authorLévêque, P.
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorJagadish, C.
dc.contributor.authorSvensson, B. G.
dc.date.accessioned2015-10-14T04:13:00Z
dc.date.available2015-10-14T04:13:00Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15917
dc.description.abstractAn experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon–interstitial carbon pair, are obtained at the same sample temperature and can be recorded with a high relative depth resolution. For 6 MeV ₁₁B ions, the peak of the interstitial profile is displaced by ∼0.5 μm towards larger depths compared to that of the vacancy profile, which is primarily attributed to the preferential forward momentum of recoiling Si atoms.
dc.description.sponsorshipFinancial support was kindly provided by the Swedish Research Council for Engineering Sciences (TFR), the Swedish Foundation for International Cooperation in Research and Higher Education (STINT), and the EU Commission, Contract No. ERBFMRXCT980208 (ENDEASD—TMR network).
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 14/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1374960
dc.sourceApplied Physics Letters
dc.titleSeparation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume78
dc.date.issued2001-05-28
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub1726
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationPellegrino, P, Royal Institute of Technology, Sweden
local.contributor.affiliationLeveque, P, Royal Institute of Technology, Sweden
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo, Norway
local.bibliographicCitation.issue22
local.bibliographicCitation.startpage3442
local.bibliographicCitation.lastpage3444
local.identifier.doi10.1063/1.1374960
dc.date.updated2015-12-10T11:11:34Z
local.identifier.scopusID2-s2.0-0035926895
CollectionsANU Research Publications

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