Pellegrino, P.; Lévêque, P.; Wong-Leung, J.; Jagadish, C.; Svensson, B. G.
An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon–interstitial carbon pair, are obtained at the same sample temperature and can be...[Show more]
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