Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation
An experimental concept of studying shifts between concentration-versus-depth profiles of vacancy and interstitial-type defects in ion-implanted silicon is demonstrated. This concept is based on deep level transient spectroscopy measurements where the filling pulse width is varied. The vacancy profile, represented by the vacancy-oxygen center, and the interstitial profile, represented by the substitutional carbon–interstitial carbon pair, are obtained at the same sample temperature and can be...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Pellegrino_Separation_of_vacancy_and_2001.pdf||Published Version||395.17 kB||Adobe PDF|
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