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Evidence of blocking effect on carrier trapping process by necking region in very narrow AlGaAs/GaAs V-grooved quantum wire structure

Liu, X. Q.; Sasaki, A.; Ohno, N.; Li, Z. F.; Lu, W.; Shen, S. C.; Fu, Y.; Willander, M.; Jagadish, C.; Tan, Hark Hoe

Description

Transient band-gaprenormalization (BGR) effects are investigated in AlGaAs/GaAs V-grooved quantum structures. The temperature-dependent transient BGR effects in the sidewall quantum well (SQWL) provide direct evidence of the existence of the blocking effect by the necking region barrier on the carrier trapping process. These effects provide a useful method to show the existence of the necking region, particularly for very thin SQWL structures. The temperature-dependent lifetimes of the SQWL and...[Show more]

CollectionsANU Research Publications
Date published: 2001-11-15
Type: Journal article
URI: http://hdl.handle.net/1885/15909
Source: Journal of Applied Physics
DOI: 10.1063/1.1410317

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