Skip navigation
Skip navigation

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Linnarsson, M K; Janson, M. S; Zimmermann, U.; Svensson, B. G.; Persson, P. O. Å.; Hultman, L.; Wong-Leung, Jennifer; Karlsson, S.; Schöner, A.; Bleichner, H.; Olsson, E.


Heavily Al-doped 4H–SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 °C and 2000 °C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy(TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit...[Show more]

CollectionsANU Research Publications
Date published: 2001-09-24
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1402160


File Description SizeFormat Image
01_Linnarsson_Solubility_limit_and_2001.pdfPublished Version434.48 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator