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Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Linnarsson, M K; Janson, M. S; Zimmermann, U.; Svensson, B. G.; Persson, P. O. Å.; Hultman, L.; Wong-Leung, J.; Karlsson, S.; Schöner, A.; Bleichner, H.; Olsson, E.

Description

Heavily Al-doped 4H–SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 °C and 2000 °C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions (ion images). Transmission electron microscopy(TEM) has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit...[Show more]

CollectionsANU Research Publications
Date published: 2001-09-24
Type: Journal article
URI: http://hdl.handle.net/1885/15907
Source: Applied Physics Letters
DOI: 10.1063/1.1402160

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