Effect of the density of collision cascades on implantation damage in GaN
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Kucheyev, S. O.; Williams, J. S.; Titov, A. I.; Li, G.; Jagadish, C.
Description
Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to...[Show more]
Collections | ANU Research Publications |
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Date published: | 2001-04-30 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/15889 |
Source: | Applied Physics Letters |
DOI: | 10.1063/1.1369149 |
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01_Kucheyev_Effect_of_the_density_of_2001.pdf | 354.22 kB | Adobe PDF |
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