Skip navigation
Skip navigation

Effect of the density of collision cascades on implantation damage in GaN

Kucheyev, S. O.; Williams, J. S.; Titov, A. I.; Li, G.; Jagadish, C.

Description

Damage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to...[Show more]

dc.contributor.authorKucheyev, S. O.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorTitov, A. I.
dc.contributor.authorLi, G.
dc.contributor.authorJagadish, C.
dc.date.accessioned2015-10-12T22:53:46Z
dc.date.available2015-10-12T22:53:46Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15889
dc.description.abstractDamage accumulation in wurtzite GaN films bombarded with 0.5 MeV Bi₁ and 1 MeV Bi₂ ions (the so-called molecular effect) is studied by Rutherford backscattering/channeling spectrometry. Results show that an increase in the density of collision cascades dramatically enhances the level of implantation-produced lattice disorder in GaN. This effect is attributed to (i) an increase in the defect clustering efficiency with increasing density of ion-beam-generated point defects and/or (ii) to collective nonlinear energy spike processes. Such a strong influence of the density of collision cascades is important to take into account for a correct estimation of implantation-produced lattice disorder in GaN.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1369149
dc.sourceApplied Physics Letters
dc.titleEffect of the density of collision cascades on implantation damage in GaN
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume78
dc.date.issued2001-04-30
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub1709
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationTitov, A I, St Petersburg State Technical University, Russia
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd, China
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue18
local.bibliographicCitation.startpage2694
local.bibliographicCitation.lastpage2696
local.identifier.doi10.1063/1.1369149
dc.date.updated2015-12-10T11:10:50Z
local.identifier.scopusID2-s2.0-0035971695
CollectionsANU Research Publications

Download

File Description SizeFormat Image
01_Kucheyev_Effect_of_the_density_of_2001.pdf354.22 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator