Kucheyev, S. O.; Williams, J. S.; Zou, J.; Jagadish, C.; Li, G.
Ion-produced lattice disorder—often an undesirable effect of ion implantation—can be reduced if implantation is carried out at an elevated temperature. We present here a study of the structural characteristics of wurtzite GaN bombarded with ¹⁹⁷Au⁺ ions at 550 °C over a wide dose range. Results show that disorder buildup and amorphization are suppressed at elevated temperatures, as compared to implantation at room temperature and below. With increasing ion dose, the evolution of damage proceeds...[Show more]
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