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Cathodoluminescence depth profiling of ion-implanted GaN

Kucheyev, S. O.; Toth, M.; Phillips, M. R.; Williams, J. S.; Jagadish, C.; Li, G.

Description

Cathodoluminescence(CL)spectroscopy shows that even relatively low-dose keV light-ion bombardment (corresponding to the generation of ∼5×10¹⁹ vacancies/cm³) of wurtzite GaN results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050 °C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer due to...[Show more]

CollectionsANU Research Publications
Date published: 2001-01-01
Type: Journal article
URI: http://hdl.handle.net/1885/15883
Source: Applied Physics Letters
DOI: 10.1063/1.1337646

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