Cathodoluminescence depth profiling of ion-implanted GaN
Cathodoluminescence(CL)spectroscopy shows that even relatively low-dose keV light-ion bombardment (corresponding to the generation of ∼5×10¹⁹ vacancies/cm³) of wurtzite GaN results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050 °C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer due to...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kucheyev_Cathodoluminescence_depth_2001.pdf||360.25 kB||Adobe PDF|
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