Deformation behavior of ion-beam-modified GaN
The deformation behavior of wurtzite GaN films modified by ion bombardment is studied by nanoindentation with a spherical indenter. Results show that implantation disorder significantly changes the mechanical properties of GaN. In particular, GaN amorphized by ion bombardment exhibits plastic deformation even for very low loads with dramatically reduced values of hardness and Young’s modulus compared to the values of as-grown GaN. Implantation-produced defects in crystalline GaN suppress the...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Kucheyev_Deformation_behavior_of_2001.pdf||462.72 kB||Adobe PDF|
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