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Electron and trap dynamics in As-ion-implanted and annealed GaAs

Giniũnas, L.; Danielius, R.; Jagadish, C.; Adomavičius, R.; Krotkus, A.; Tan, Hark Hoe

Description

The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements.Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.

CollectionsANU Research Publications
Date published: 2001-03-19
Type: Journal article
URI: http://hdl.handle.net/1885/15879
Source: Applied Physics Letters
DOI: 10.1063/1.1356727

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