Electron and trap dynamics in As-ion-implanted and annealed GaAs
The ultrafast dynamics of As-ion-implanted and annealed GaAs is investigated using transmission pump–probe measurements.Carrier recombination time was found to increase from 4 to 40 ps with increasing annealing temperature. At lower annealing temperatures, the transmitted optical signal is dominated by induced absorption and at higher annealing temperatures this effect is replaced by induced transparency.
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Giniũnas_Electron_and_trap_dynamics_in_2001.pdf||363.84 kB||Adobe PDF|
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