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Linear optical properties of Ge nanocrystals in silica

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Dowd, Annette; Elliman, Robert G.; Luther-Davies, Barry

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The absorption and extinctionspectra of Genanocrystals in silica formed by ion implantation are studied using photothermal deflection and transmission spectroscopies. It is found that scattering makes a significant contribution to the extinction spectrum, damping the spectral features and resulting in a Rayleigh scattering-likeω⁴ dependence. In contrast, the spectra measured by photothermal deflection clearly show features such as the E1/E1+Δ1 transitions. The Tauc gap is extracted to be...[Show more]

dc.contributor.authorDowd, Annette
dc.contributor.authorElliman, Robert G.
dc.contributor.authorLuther-Davies, Barry
dc.date.accessioned2015-10-12T03:46:50Z
dc.date.available2015-10-12T03:46:50Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15878
dc.description.abstractThe absorption and extinctionspectra of Genanocrystals in silica formed by ion implantation are studied using photothermal deflection and transmission spectroscopies. It is found that scattering makes a significant contribution to the extinction spectrum, damping the spectral features and resulting in a Rayleigh scattering-likeω⁴ dependence. In contrast, the spectra measured by photothermal deflection clearly show features such as the E1/E1+Δ1 transitions. The Tauc gap is extracted to be ∼0.7±0.1 eV.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 12/10/15). Copyright (year) American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1409591
dc.sourceApplied Physics Letters
dc.titleLinear optical properties of Ge nanocrystals in silica
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume79
dc.date.issued2001-10-08
local.identifier.absfor091207
local.identifier.ariespublicationMigratedxPub1691
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationDowd, A, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationLuther-Davies, Barry, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Laser Physics Centre, The Australian National University
local.bibliographicCitation.issue15
local.bibliographicCitation.startpage2327
local.bibliographicCitation.lastpage2329
local.identifier.doi10.1063/1.1409591
dc.date.updated2015-12-10T11:09:51Z
local.identifier.scopusID2-s2.0-0040924208
CollectionsANU Research Publications

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