Electrical isolation of n-type and p-type InP layers by proton bombardment
The evolution of the sheet resistance(Rs) of n-type and p-type conductive InP layers during proton irradiation and the stability of the formed isolation during postirradiation annealing were investigated. It was found that the threshold dose (Dth) to convert the conductive layer to a highly resistive one is different for n- and p-type samples with similar initial free carrier concentrations. From our results, one infers that the antisite defects and/or related defect complexes formed by the...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Boudinov_Electrical_isolation_of_n-type_2001.pdf||430.56 kB||Adobe PDF|
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