Skip navigation
Skip navigation

Electrical isolation of GaN by MeV ion irradiation

Boudinov, H.; Kucheyev, S. O.; Williams, J. S.; Jagadish, C.; Li, G.


The evolution of sheet resistance of n-type GaN epilayers exposed to irradiation with MeV H, Li, C, and O ions is studied in situ. Results show that the threshold dose necessary for complete isolation linearly depends on the original free electron concentration and reciprocally depends on the number of atomic displacements produced by ion irradiation. Furthermore, such isolation is stable to rapid thermal annealing at temperatures up to 900 °C. In addition to providing a better understanding of...[Show more]

CollectionsANU Research Publications
Date published: 2001-02-12
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1348306


File Description SizeFormat Image
01_Boudinov_Electrical_isolation_of_GaN_by_2001.pdf355.92 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  19 May 2020/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator