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Selectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon

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Stritzker, B.; Petravic, M.; Wong-Leung, Jennifer; Williams, J. S.

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The selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a strong preference for gettering to open volume defects, even when high concentrations of interstitial-based loops are present in close proximity. However, the gettering of Fe in samples containing...[Show more]

dc.contributor.authorStritzker, B.
dc.contributor.authorPetravic, M.
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorWilliams, J. S.
dc.date.accessioned2015-10-09T04:49:46Z
dc.date.available2015-10-09T04:49:46Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15857
dc.description.abstractThe selectivity of interstitial-based extended defects (loops) and nanocavities for the gettering of Cu and Fe in Si has been studied. Controlled amounts of Cu and Fe were introduced by ion implantation into wafers containing pre-existing nanocavities and/or dislocations. Results show that Cu has a strong preference for gettering to open volume defects, even when high concentrations of interstitial-based loops are present in close proximity. However, the gettering of Fe in samples containing both vacancy- and interstitial-type defects is more complex, with Fe accumulation at all regions in the sample which contain defects, whether they are vacancy- or interstitial-like in character.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2001 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1363689
dc.sourceApplied Physics Letters
dc.titleSelectivity of nanocavities and dislocations for gettering of Cu and Fe in silicon
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume78
dc.date.issued2001-04-30
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub1637
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationStritzker, B, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationPetravic, Mladen, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.bibliographicCitation.issue18
local.bibliographicCitation.startpage2682
local.bibliographicCitation.lastpage2684
local.identifier.doi10.1063/1.1363689
dc.date.updated2015-12-10T11:05:33Z
local.identifier.scopusID2-s2.0-0035971854
CollectionsANU Research Publications

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