Herrick, A.; Perry, A. J.; Boswell, R. W.
The etch rate of silicon by SF₆ in a helicon reactor has been measured along with simultaneous actinometric measurements of the concentration of atomic fluorine in the gas phase for a variety of gas flow rates resulting in pressures in the mTorr range. A bias rf power was applied to the substrate to investigate the effect of ion energy on the etch rate. The etch rate was found to be proportional to the fluorine concentration and independent of the bias for the higher gas flow rates. However, at...[Show more]
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