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Suppression of thermal atomic interdiffusion in C-doped InGaAs∕AlGaAs quantum well laser structures using TiO₂ dielectric layers

Gareso, P. L; Buda, Manuela; Fu, Lan; Tan, H. H.; Jagadish, C.


The effects of thermal annealing on C-doped InGaAs∕AlGaAs quantum well laser structures capped with titanium dioxide (TiO₂) layers were investigated. The atomic interdiffusion was greatly suppressed by the presence of a TiO₂ capping layer during annealing, inhibiting even the thermal intermixing observed in the uncapped sample. An increase in the amount of lattice contraction associated with the presence of substitutional carbonCAs after annealing without a capping layer was observed, but not...[Show more]

CollectionsANU Research Publications
Date published: 2004-12-06
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1833563


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