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Mutual passivation of group IV donors and nitrogen in diluted GaNₓAs₁ˍₓ alloys

Yu, K. M.; Walukiewicz, W.; Wu, J.; Shan, W.; Beeman, J. W.; Scarpulla, M. A.; Dubon, O. D.; Ridgway, M. C.; Mars, D. E.; Chamberlin, D. R.

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We demonstrate the mutual passivation phenomenon of Ge donors and isovalent N in highly mismatched alloy GaNₓAs₁ˍₓdoped with Ge. Layers of this alloy were formed by the sequential implantation of Ge and N ions followed by pulsed laser melting and rapid thermal annealing. The mutual passivation effect results in the electrical deactivation of GeGa donors (Ge on Ga sites) and suppression of the NAs (N on As sites) induced band gap narrowing through the formation of GeGa–NAs nearest neighbor...[Show more]

dc.contributor.authorYu, K. M.
dc.contributor.authorWalukiewicz, W.
dc.contributor.authorWu, J.
dc.contributor.authorShan, W.
dc.contributor.authorBeeman, J. W.
dc.contributor.authorScarpulla, M. A.
dc.contributor.authorDubon, O. D.
dc.contributor.authorRidgway, M. C.
dc.contributor.authorMars, D. E.
dc.contributor.authorChamberlin, D. R.
dc.date.accessioned2015-10-09T03:11:40Z
dc.date.available2015-10-09T03:11:40Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15843
dc.description.abstractWe demonstrate the mutual passivation phenomenon of Ge donors and isovalent N in highly mismatched alloy GaNₓAs₁ˍₓdoped with Ge. Layers of this alloy were formed by the sequential implantation of Ge and N ions followed by pulsed laser melting and rapid thermal annealing. The mutual passivation effect results in the electrical deactivation of GeGa donors (Ge on Ga sites) and suppression of the NAs (N on As sites) induced band gap narrowing through the formation of GeGa–NAs nearest neighbor pairs. These results in combination with the analogous effect observed in Si-doped GaNₓAs₁ˍₓ provide clear evidence of the general nature of the mutual passivation phenomenon in highly mismatched semiconductor alloys.
dc.description.sponsorshipThis work was supported by the Director, Office of Science, Office of Basic Energy Sciences, Division of Materials Sciences and Engineering, U.S. Department of Energy, under Contract No. DE-AC03-76SF00098. One of the authors ~M.A.S.! acknowledges support by an NSF graduate research fellowship.
dc.publisherAmerican Institute of Physics (AIP)
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1616980
dc.sourceApplied Physics Letters
dc.subjectKeywords: Germanium alloys; Nitrogen; Passivation; Rapid thermal annealing; Mutual passivation; Gallium alloys
dc.titleMutual passivation of group IV donors and nitrogen in diluted GaNₓAs₁ˍₓ alloys
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume83
dc.date.issued2003-10-06
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub15992
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationYu, Kin Man, Lawrence Livermore National Laboratory, United States of America
local.contributor.affiliationWalukiewicz, W., Lawrence Berkeley National Laboratory, United States of America
local.contributor.affiliationWu, J., Lawrence Berkeley National Laboratory, United States of America
local.contributor.affiliationShan, Wei, OptiWork, Inc., United States of America
local.contributor.affiliationBeeman, J. W., Lawrence Berkeley National Laboratory, United States of America
local.contributor.affiliationScarpulla, M. A., University of California, United States of America
local.contributor.affiliationDubon, O. D., University of California, United States of America
local.contributor.affiliationRidgway, Mark C., College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationMars, D. E., Agilent Laboratories, United States of America
local.contributor.affiliationChamberlin, D. R., Agilent Laboratories, United States of America
local.bibliographicCitation.issue14
local.bibliographicCitation.startpage2844
local.bibliographicCitation.lastpage2846
local.identifier.doi10.1063/1.1616980
dc.date.updated2015-12-12T08:18:29Z
local.identifier.scopusID2-s2.0-10744231136
CollectionsANU Research Publications

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