Yu, K. M.; Walukiewicz, W.; Wu, J.; Shan, W.; Beeman, J. W.; Scarpulla, M. A.; Dubon, O. D.; Ridgway, M. C.; Mars, D. E.; Chamberlin, D. R.
We demonstrate the mutual passivation phenomenon of Ge donors and isovalent N in highly mismatched alloy GaNₓAs₁ˍₓdoped with Ge. Layers of this alloy were formed by the sequential implantation of Ge and N ions followed by pulsed laser melting and rapid thermal annealing. The mutual passivation effect results in the electrical deactivation of GeGa donors (Ge on Ga sites) and suppression of the NAs (N on As sites) induced band gap narrowing through the formation of GeGa–NAs nearest neighbor...[Show more]
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