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Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

Deenapanray, Prakash N. K.; Petravić, M.; Kim, K.-J.; Kim, B.; Li, G.

Description

We have investigated compositional changes on GaNsurfaces under Ar-ion bombardment using synchrotron-based high-resolution x-rayphotoemission (PES) and near-edge x-ray absorption fine structure(NEXAFS)spectroscopy. The low-energy ion bombardment of GaN produces a Ga-rich surface layer which transforms into a metallic Ga layer at higher bombarding energies. At the same time, the photoemissionspectra around N 1s core levels reveal the presence of both uncoordinated nitrogen and nitrogen...[Show more]

dc.contributor.authorDeenapanray, Prakash N. K.
dc.contributor.authorPetravić, M.
dc.contributor.authorKim, K.-J.
dc.contributor.authorKim, B.
dc.contributor.authorLi, G.
dc.date.accessioned2015-10-09T00:21:07Z
dc.date.available2015-10-09T00:21:07Z
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/15829
dc.description.abstractWe have investigated compositional changes on GaNsurfaces under Ar-ion bombardment using synchrotron-based high-resolution x-rayphotoemission (PES) and near-edge x-ray absorption fine structure(NEXAFS)spectroscopy. The low-energy ion bombardment of GaN produces a Ga-rich surface layer which transforms into a metallic Ga layer at higher bombarding energies. At the same time, the photoemissionspectra around N 1s core levels reveal the presence of both uncoordinated nitrogen and nitrogen interstitials, which we have analyzed in more details by x-rayabsorption measurements at N K edge. We have demonstrated that PES and NEXAFS provide a powerful combination for studying the compositional changes on GaNsurfaces. A mechanism for the relocation and loss of nitrogen during ion bombardment in agreement with some recent experimental and theoretical studies of defect formation in GaN has been proposed.
dc.description.sponsorshipP.N.K.D. is grateful for the financial support of the Australian Research Council.
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0003-6951..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at https://doi.org/10.1063/1.1626792
dc.sourceApplied Physics Letters
dc.subjectKeywords: Absorption spectroscopy; Composition effects; Defects; Emission spectroscopy; Ion bombardment; Nitrogen; Reaction kinetics; Surface chemistry; Synchrotron radiation; X ray spectroscopy; Compositional changes; Defect formation; High resolution x ray photoe
dc.titleCompositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume83
dc.date.issued2003-12-15
local.identifier.absfor090699
local.identifier.ariespublicationMigratedxPub15958
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationDeenapanray, Prakash, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationPetravic, Mladen, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationKim, K J, Pohang University of Science and Technology, Korea, South
local.contributor.affiliationKim, Bongsoo, Pohong University of Science and Technology, Korea, South
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd, China
local.bibliographicCitation.issue24
local.bibliographicCitation.startpage4948
local.bibliographicCitation.lastpage4950
local.identifier.doi10.1063/1.1626792
dc.date.updated2015-12-12T08:18:14Z
local.identifier.scopusID2-s2.0-0346038796
CollectionsANU Research Publications

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