Impurity free vacancy disordering of InGaAs quantum dots
The effect of thermal interdiffusion on In(Ga)As∕GaAsquantum dot structures is very significant, due to the large strain and high concentration of indium within the dots. The traditional high temperature annealing conditions used in impurity free vacancy disordering of quantum wells cannot be used for quantum dots, as the dots can be destroyed at these temperatures. However, additional shifts due to capping layers can be achieved at low annealing temperatures. Spin-on-glass, plasma enhanced...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Lever_Impurity_free_vacancy_2004.pdf||445.29 kB||Adobe PDF|
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