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Nitrogen-rich indium nitride

Butcher, K. S. A.; Wintrebert-Fouquet, M.; Chen, Patrick; Tansley, T. L.; Dou, H.; Shrestha, Santosh K.; Timmers, H.; Kuball, M.; Prince, K. E.; Bradby, J.

Description

Elastic recoil detection analysis, using an incident beam of 200 MeV Au ions, has been used to measureindium nitride films grown by radio-frequency sputtering. It is shown that the films have nitrogen-rich stoichiometry. Nitrogen vacancies are therefore unlikely to be responsible for the commonly observed high background carrier concentration. Ultraviolet Raman and secondary ion mass spectroscopymeasurements are used to probe the state of the excess nitrogen. The nitrogen on indium anti-site...[Show more]

CollectionsANU Research Publications
Date published: 2004-06-01
Type: Journal article
URI: http://hdl.handle.net/1885/15818
Source: Journal of Applied Physics
DOI: 10.1063/1.1711173

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