Phase transformations induced in relaxed amorphous silicon by indentation at room temperature
The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical nanoindentation in both relaxed (annealed) and unrelaxed (as-implanted) a-Si. Interestingly, phase transformations were clearly observed in the relaxed state, with the load–unload curves from these samples displaying characteristic discontinuities and cross-sectional transmission electron microscopy images indicating the presence of high-pressure crystalline phases Si-III and Si-XII following...[Show more]
|Collections||ANU Research Publications|
|Source:||Applied Physics Letters|
|01_Haberl_Phase_transformations_induced_2004.pdf||Published Version||135.11 kB||Adobe PDF|
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