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Phase transformations induced in relaxed amorphous silicon by indentation at room temperature

Haberl, Bianca; Bradby, J. E.; Swain, M. V.; Williams, J. S.; Munroe, P.


The deformation behavior of self-ion-implanted amorphous-Si (a-Si) has been studied using spherical nanoindentation in both relaxed (annealed) and unrelaxed (as-implanted) a-Si. Interestingly, phase transformations were clearly observed in the relaxed state, with the load–unload curves from these samples displaying characteristic discontinuities and cross-sectional transmission electron microscopy images indicating the presence of high-pressure crystalline phases Si-III and Si-XII following...[Show more]

CollectionsANU Research Publications
Date published: 2004-12-06
Type: Journal article
Source: Applied Physics Letters
DOI: 10.1063/1.1832757


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