Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals
The effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals was analyzed. The [112̄0] channel was found to exhibit the deepest channeling with a maximum penetration depth 45 times greater than the projected range of the ran
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Wong-Leung_Effect_of_crystal_orientation_2003.pdf||Published Version||77.15 kB||Adobe PDF|
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