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Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Wong-Leung, J.; Janson, M. S.; Svensson, B. G.

Description

The effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals was analyzed. The [112̄0] channel was found to exhibit the deepest channeling with a maximum penetration depth 45 times greater than the projected range of the ran

CollectionsANU Research Publications
Date published: 2003-06-01
Type: Journal article
URI: http://hdl.handle.net/1885/15812
Source: Journal of Applied Physics
DOI: 10.1063/1.1569972

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