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Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Kuznetsov, A. Yu.; Wong-Leung, Jennifer; Hallén, A.; Jagadish, C.; Svensson, B. G.

Description

A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10¹⁰–4.9×10¹³ ions/cm² s) and keeping the implantation dose constant at 5×10¹⁴ Si⁺/cm². The implants were performed both at room and elevated temperatures, up to 220 °C. Rutherford backscattering spectrometry in the channelling mode using...[Show more]

dc.contributor.authorKuznetsov, A. Yu.
dc.contributor.authorWong-Leung, Jennifer
dc.contributor.authorHallén, A.
dc.contributor.authorJagadish, C.
dc.contributor.authorSvensson, B. G.
dc.date.accessioned2015-10-08T03:04:29Z
dc.date.available2015-10-08T03:04:29Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15809
dc.description.abstractA strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10¹⁰–4.9×10¹³ ions/cm² s) and keeping the implantation dose constant at 5×10¹⁴ Si⁺/cm². The implants were performed both at room and elevated temperatures, up to 220 °C. Rutherford backscattering spectrometry in the channelling mode using 2 MeV He⁺ ions was employed to measure ion implantation damage profiles in the samples. For the flux interval used the most, pronounced dynamic annealingeffect was detected at 80–160 °C, having an activation energy of 1.3 eV. For example, at 100 °C the amount of disordered Si atoms at the projected ion range is reduced by a factor of 4 by decreasing the ion flux from 4.9×10¹³ to 1.9×10¹⁰ ions/cm² s. The results are discussed in terms of migration and annihilation of intrinsic type defects for both the Si- and C-sublattices. In addition, two regions for the damage accumulation – at the surface and at the damage peak for 100 keV Si⁺ ions – are observed.
dc.description.sponsorshipPartial financial support for this work was received from the Swedish Foundation for Strategic Research ~SSF!, the Swedish Foundation for International Cooperation in Research and Higher Education ~STINT!, the Norwegian Research Council ~NFR!, and the Nordic Academy for Education and Research Training ~NorFA!. One of the authors ~J.W.L.! acknowledges the Australian Research Council for funding under the fellowship program.
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1622797
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Activation energy; Amorphization; Annealing; Crystal lattices; Ion implantation; Radiation damage; Rutherford backscattering spectroscopy; Silicon wafers; Annihilation; Temperature dependence; Silicon carbide
dc.titleDynamic annealing in ion implanted SiC: Flux versus temperature dependence
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume94
dc.date.issued2003-12-01
local.identifier.absfor091299
local.identifier.ariespublicationMigratedxPub15468
local.publisher.urlhttps://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationKuznetsov, A Yu, University of Oslo, Norway
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationHallen, A, Royal Institute of Technology, Sweden
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationSvensson, Bengt Gunnar, University of Oslo, Norway
local.bibliographicCitation.issue11
local.bibliographicCitation.startpage7112
local.bibliographicCitation.lastpage7115
local.identifier.doi10.1063/1.1622797
dc.date.updated2015-12-12T08:12:31Z
local.identifier.scopusID2-s2.0-0348157031
CollectionsANU Research Publications

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