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Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Kuznetsov, A. Yu.; Wong-Leung, J.; Hallén, A.; Jagadish, C.; Svensson, B. G.


A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10¹⁰–4.9×10¹³ ions/cm² s) and keeping the implantation dose constant at 5×10¹⁴ Si⁺/cm². The implants were performed both at room and elevated temperatures, up to 220 °C. Rutherford backscattering spectrometry in the channelling mode using...[Show more]

CollectionsANU Research Publications
Date published: 2003-12-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1622797


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