Dynamic annealing in ion implanted SiC: Flux versus temperature dependence
A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10¹⁰–4.9×10¹³ ions/cm² s) and keeping the implantation dose constant at 5×10¹⁴ Si⁺/cm². The implants were performed both at room and elevated temperatures, up to 220 °C. Rutherford backscattering spectrometry in the channelling mode using...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Kuznetsov_Dynamic_annealing_in_ion_2003.pdf||425.77 kB||Adobe PDF|
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