Skip navigation
Skip navigation

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Kuznetsov, A. Yu.; Wong-Leung, J.; Hallén, A.; Jagadish, C.; Svensson, B. G.

Description

A strong influence of ion implantation flux on the accumulation of radiation damage, the so-called dose rate effect, is observed and systematically studied in SiC. 100 keV Si⁺ ions were implanted into bulk 4H-SiC wafers using different ion fluxes (1.9×10¹⁰–4.9×10¹³ ions/cm² s) and keeping the implantation dose constant at 5×10¹⁴ Si⁺/cm². The implants were performed both at room and elevated temperatures, up to 220 °C. Rutherford backscattering spectrometry in the channelling mode using...[Show more]

CollectionsANU Research Publications
Date published: 2003-12-01
Type: Journal article
URI: http://hdl.handle.net/1885/15809
Source: Journal of Applied Physics
DOI: 10.1063/1.1622797

Download

File Description SizeFormat Image
01_Kuznetsov_Dynamic_annealing_in_ion_2003.pdf425.77 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  23 August 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator