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Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector

Stewart, K.; Buda, Manuela; Wong-Leung, J.; Fu, Lan; Jagadish, C.; Stiff-Roberts, A.; Bhattacharya, P.

Description

In this article the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grownquantum dot infrared photodetector(QDIP) device is studied. Temperatures in the range of 600–800 °C for 60 s, typical of atomic interdiffusion methods are used. After rapid thermal annealing the devices exhibited large dark currents and no photoresponse could be measured. Double crystal x-ray diffraction and cross sectional transmission electron microscopy studies indicate that...[Show more]

dc.contributor.authorStewart, K.
dc.contributor.authorBuda, Manuela
dc.contributor.authorWong-Leung, J.
dc.contributor.authorFu, Lan
dc.contributor.authorJagadish, C.
dc.contributor.authorStiff-Roberts, A.
dc.contributor.authorBhattacharya, P.
dc.date.accessioned2015-10-08T02:55:16Z
dc.date.available2015-10-08T02:55:16Z
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/1885/15808
dc.description.abstractIn this article the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grownquantum dot infrared photodetector(QDIP) device is studied. Temperatures in the range of 600–800 °C for 60 s, typical of atomic interdiffusion methods are used. After rapid thermal annealing the devices exhibited large dark currents and no photoresponse could be measured. Double crystal x-ray diffraction and cross sectional transmission electron microscopy studies indicate that this could be the result of strain relaxation. V-shaped dislocations which extended across many quantum dot(QD) layers formed in the RTA samples. Smaller defect centers were observed throughout the as-grown sample and are also likely a strain relaxation mechanism. This supports the idea that strained structures containing dislocations are more likely to relax via the formation of dislocations and/or the propagation of existing dislocations, instead of creating atomic interdiffusion during RTA. Photoluminescence (PL) studies also found that Si related complexes developed in the Si doped GaAs contact layers with RTA. The PL from these Si related complexes overlaps and dominates the PL from our QD ground state.
dc.description.sponsorshipThe research at the Australian National University was supported by the Australian Research Council and the work at the University of Michigan was supported by DARPA under Grant No. DAAD19-00-1-0394.
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/issn/0021-8979..."Publishers version/PDF may be used on author's personal website, institutional website or institutional repository" from SHERPA/RoMEO site (as at 8/10/15). Copyright 2003 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics and may be found at https://doi.org/10.1063/1.1609634
dc.sourceJournal of Applied Physics
dc.subjectKeywords: Electric currents; Interdiffusion (solids); Photoluminescence; Rapid thermal annealing; Semiconducting gallium arsenide; Semiconducting indium compounds; Semiconducting silicon; Semiconductor doping; Semiconductor growth; Semiconductor quantum dots; Quant
dc.titleInfluence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
dc.typeJournal article
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.citationvolume94
dc.date.issued2003-10-15
local.identifier.absfor090699
local.identifier.absfor020501
local.identifier.ariespublicationMigratedxPub15444
local.type.statusPublished Version
local.contributor.affiliationStewart Sears, Kalista, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationBuda, Manuela, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationWong-Leung, Yin-Yin (Jennifer), College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National University
local.contributor.affiliationStiff-Roberts, A, University of Michigan, United States of America
local.contributor.affiliationBhattacharya, P, University of Michigan, United States of America
local.bibliographicCitation.issue8
local.bibliographicCitation.startpage5283
local.bibliographicCitation.lastpage5289
local.identifier.doi10.1063/1.1609634
dc.date.updated2015-12-12T08:12:22Z
local.identifier.scopusID2-s2.0-0242272329
CollectionsANU Research Publications

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