Influence of rapid thermal annealing on a 30 stack InAs/GaAs quantum dot infrared photodetector
In this article the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grownquantum dot infrared photodetector(QDIP) device is studied. Temperatures in the range of 600–800 °C for 60 s, typical of atomic interdiffusion methods are used. After rapid thermal annealing the devices exhibited large dark currents and no photoresponse could be measured. Double crystal x-ray diffraction and cross sectional transmission electron microscopy studies indicate that...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Stewart_Influence_of_rapid_thermal_2003.pdf||840.12 kB||Adobe PDF|
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