Stewart, K.; Buda, M.; Wong-Leung, J.; Fu, L.; Jagadish, C.; Stiff-Roberts, A.; Bhattacharya, P.
In this article the effect of rapid thermal annealing (RTA) on a 30 stacked InAs/GaAs, molecular beam epitaxially grownquantum dot infrared photodetector(QDIP) device is studied. Temperatures in the range of 600–800 °C for 60 s, typical of atomic interdiffusion methods are used. After rapid thermal annealing the devices exhibited large dark currents and no photoresponse could be measured. Double crystal x-ray diffraction and cross sectional transmission electron microscopy studies indicate that...[Show more]
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