Skip navigation
Skip navigation

Electrical isolation of n- and p-In₀.₅₃Ga₀.₄₇As epilayers using ion irradiation

Carmody, C.; Tan, H. H.; Jagadish, C.


A study of the evolution of sheet resistance of p- and n-type In₀.₅₃Ga₀.₄₇As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs as compared to p-InGaAs and was greater for samples with a higher initial free carrier concentration.Implantation with H⁺ yielded isolation behavior that was different from that for implantation with the three...[Show more]

CollectionsANU Research Publications
Date published: 2003-11-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1619567


File Description SizeFormat Image
01_Carmody_Electrical_isolation_of_n-_and_2003.pdf443.59 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  20 July 2017/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator