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Electrical isolation of n- and p-In₀.₅₃Ga₀.₄₇As epilayers using ion irradiation

Carmody, C.; Jagadish, C.; Tan, Hark Hoe


A study of the evolution of sheet resistance of p- and n-type In₀.₅₃Ga₀.₄₇As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs as compared to p-InGaAs and was greater for samples with a higher initial free carrier concentration.Implantation with H⁺ yielded isolation behavior that was different from that for implantation with the three...[Show more]

CollectionsANU Research Publications
Date published: 2003-11-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1619567


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