Electrical isolation of n- and p-In₀.₅₃Ga₀.₄₇As epilayers using ion irradiation
A study of the evolution of sheet resistance of p- and n-type In₀.₅₃Ga₀.₄₇As epilayers during O, C, Li, and H irradiation was conducted. The threshold dose at which the material becomes highly resistive increased upon decreasing the mass of the implanted ion, was higher for n-InGaAs as compared to p-InGaAs and was greater for samples with a higher initial free carrier concentration.Implantation with H⁺ yielded isolation behavior that was different from that for implantation with the three...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
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