Iron detection in crystalline silicon by carrier lifetime measurements for arbitrary injection and doping
An existing technique for accurate measurement of iron in silicon, which was previously restricted to low injection and a narrow doping range, has been extended to arbitrary injection and doping levels. This allows contactless lifetime measurement techniques to be used for very sensitive and rapid iron detection under a wide range of conditions. In addition, an easily measured and unambiguous “fingerprint” of iron in silicon has been identified. It is based on the invariant nature of the excess...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Macdonald_Iron_detection_in_crystalline_2004.pdf||472.96 kB||Adobe PDF|
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