Onset of implant-related recombination in self-ion implanted and annealed crystalline silicon
The impact of residual recombination centers after low-energy self-implantation of crystalline silicon wafers and annealing at 900 °C has been determined by bulk carrier lifetime measurements as a function of implant dose. Doses below 10¹³cm⁻² resulted in no measurable increase in recombination, while higher doses caused a linear increase in the recombination center density. This threshold value corresponds to the known critical dose required for the formation of relatively stable dislocation...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|01_Macdonald_Onset_of_implant-related_2004.pdf||428.07 kB||Adobe PDF|
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